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Class 12 Physics Formula Sheet (CBSE 2026-27)

NCERT Class 12 · All 14 Chapters · Free PDF

Every formula from all 14 NCERT Class 12 Physics chapters in one place, checked against the NCERT textbook (Reprint 2026-27) and the official CBSE 2026-27 syllabus. Qualitative-only topics in the 2026-27 syllabus are marked separately.

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How to use this sheet. Plain boxes cover the CBSE 2026-27 board-exam syllabus. Amber boxes marked ★ Qualitative only are topics the 2026-27 syllabus lists for qualitative treatment, so expect conceptual questions on them rather than derivations or numericals. Grey boxes marked ◇ Not in 2026-27 syllabus are in the NCERT book but not in the current syllabus. They are kept for reference and JEE/NEET. Constants: \(e = 1.6 \times 10^{-19}\,\text{C}\), \(\frac{1}{4\pi\varepsilon_0} = 9 \times 10^{9}\,\text{N m}^2\,\text{C}^{-2}\), \(\varepsilon_0 = 8.854 \times 10^{-12}\,\text{C}^2\,\text{N}^{-1}\,\text{m}^{-2}\), \(\mu_0 = 4\pi \times 10^{-7}\,\text{T m A}^{-1}\), \(h = 6.63 \times 10^{-34}\,\text{J s}\), \(c = 3 \times 10^{8}\,\text{m s}^{-1}\), \(m_e = 9.1 \times 10^{-31}\,\text{kg}\).
  1. Electric Charges and Fields
  2. Electrostatic Potential and Capacitance
  3. Current Electricity
  4. Moving Charges and Magnetism
  5. Magnetism and Matter
  6. Electromagnetic Induction
  7. Alternating Current
  8. Electromagnetic Waves
  9. Ray Optics and Optical Instruments
  10. Wave Optics
  11. Dual Nature of Radiation and Matter
  12. Atoms
  13. Nuclei
  14. Semiconductor Electronics

1Electric Charges and Fields

Charge and Coulomb's law

  • Quantisation: \(q = ne\), \(n = 0, \pm 1, \pm 2, \dots\)
  • Charge is additive and conserved.
  • Coulomb's law: $$F = \frac{1}{4\pi\varepsilon_0}\,\frac{q_1 q_2}{r^2}$$
  • Vector form: \(\vec{F}_{21} = \dfrac{1}{4\pi\varepsilon_0}\dfrac{q_1 q_2}{r_{21}^2}\,\hat{r}_{21}\) (force on \(q_2\) due to \(q_1\))
  • Superposition: \(\vec{F}_1 = \vec{F}_{12} + \vec{F}_{13} + \dots + \vec{F}_{1n}\)

Electric field

  • \(\vec{E} = \vec{F}/q\), SI unit N C\(^{-1}\) (= V m\(^{-1}\))
  • Point charge: $$\vec{E} = \frac{1}{4\pi\varepsilon_0}\,\frac{q}{r^2}\,\hat{r}$$
  • System of charges: \(\vec{E} = \dfrac{1}{4\pi\varepsilon_0}\sum_i \dfrac{q_i}{r_{iP}^2}\,\hat{r}_{iP}\)
  • Charge densities: \(\lambda = \frac{\Delta Q}{\Delta l}\), \(\sigma = \frac{\Delta Q}{\Delta S}\), \(\rho = \frac{\Delta Q}{\Delta V}\)

Electric dipole

  • Dipole moment \(\vec{p} = q \times 2a\,\hat{p}\), from \(-q\) to \(+q\)
  • Axial point (\(r \gg a\)): \(\vec{E} = \dfrac{1}{4\pi\varepsilon_0}\dfrac{2\vec{p}}{r^3}\)
  • Equatorial point (\(r \gg a\)): \(\vec{E} = -\dfrac{1}{4\pi\varepsilon_0}\dfrac{\vec{p}}{r^3}\)
  • Dipole field falls as \(1/r^3\); point-charge field as \(1/r^2\).

Dipole in a uniform field

  • Torque: \(\vec{\tau} = \vec{p} \times \vec{E}\), \(\ |\tau| = pE\sin\theta\)
  • Net force = 0 in a uniform field
  • Non-uniform field: net force is non-zero

Flux and Gauss's law

  • Flux: \(\Delta\phi = \vec{E}\cdot\Delta\vec{S} = E\,\Delta S\cos\theta\)
  • Gauss's law: $$\oint \vec{E}\cdot d\vec{S} = \frac{q_{\text{enclosed}}}{\varepsilon_0}$$
  • Charges outside the surface contribute zero net flux.

Applications of Gauss's law

  • Infinite straight wire: \(\vec{E} = \dfrac{\lambda}{2\pi\varepsilon_0 r}\,\hat{n}\)
  • Infinite plane sheet: \(\vec{E} = \dfrac{\sigma}{2\varepsilon_0}\,\hat{n}\) (independent of distance)
  • Thin spherical shell, outside (\(r \ge R\)): \(\vec{E} = \dfrac{q}{4\pi\varepsilon_0 r^2}\,\hat{r}\)
  • Thin spherical shell, inside (\(r < R\)): \(E = 0\)

2Electrostatic Potential and Capacitance

Potential

  • \(V = W/q\): work done by an external force to bring a unit positive charge from infinity
  • Point charge: \(V = \dfrac{1}{4\pi\varepsilon_0}\dfrac{q}{r}\)
  • Dipole: \(V = \dfrac{1}{4\pi\varepsilon_0}\dfrac{p\cos\theta}{r^2}\) (zero on the equatorial plane)
  • System of charges: \(V = \dfrac{1}{4\pi\varepsilon_0}\sum_i \dfrac{q_i}{r_{iP}}\)
  • Shell: \(V = \dfrac{q}{4\pi\varepsilon_0 r}\) outside, \(V = \dfrac{q}{4\pi\varepsilon_0 R}\) inside (constant)

Field and potential

  • \(E = -\dfrac{dV}{dr}\), i.e. \(|\vec{E}| = \dfrac{|\delta V|}{\delta l}\) along the normal to the equipotential
  • \(\vec{E}\) points in the direction of steepest decrease of \(V\)
  • \(\vec{E}\) is perpendicular to every equipotential surface
  • No work is done moving a charge along an equipotential surface

Potential energy

  • Two charges: \(U = \dfrac{1}{4\pi\varepsilon_0}\dfrac{q_1 q_2}{r_{12}}\)
  • Three charges: \(U = \dfrac{1}{4\pi\varepsilon_0}\left(\dfrac{q_1q_2}{r_{12}} + \dfrac{q_1q_3}{r_{13}} + \dfrac{q_2q_3}{r_{23}}\right)\)
  • Single charge in external field: \(qV(\vec{r})\)
  • Two charges in external field: \(q_1V(\vec{r}_1) + q_2V(\vec{r}_2) + \dfrac{q_1q_2}{4\pi\varepsilon_0 r_{12}}\)
  • Dipole in uniform field: \(U(\theta) = -pE\cos\theta = -\vec{p}\cdot\vec{E}\)

Conductors and dielectrics

  • Inside a conductor: \(E = 0\); \(V\) is constant throughout
  • Just outside the surface: \(\vec{E} = \dfrac{\sigma}{\varepsilon_0}\,\hat{n}\)
  • Excess charge resides only on the surface
  • Polarisation: \(\vec{P} = \chi_e\vec{E}\) (\(\chi_e\) = electric susceptibility)
  • Dielectric constant: \(K = \varepsilon_r = \varepsilon/\varepsilon_0\)

Capacitance

  • \(C = Q/V\), SI unit farad (F)
  • Parallel plate (vacuum): $$C_0 = \frac{\varepsilon_0 A}{d}$$
  • Filled with dielectric: \(C = \dfrac{K\varepsilon_0 A}{d} = KC_0\)
  • Series: \(\dfrac{1}{C} = \dfrac{1}{C_1} + \dfrac{1}{C_2} + \dots\) (same \(Q\) on each)
  • Parallel: \(C = C_1 + C_2 + \dots\) (same \(V\) across each)

Energy stored (formulae only)

  • $$U = \frac{Q^2}{2C} = \frac{1}{2}CV^2 = \frac{1}{2}QV$$
  • Energy density of the field: \(u = \dfrac{1}{2}\varepsilon_0 E^2\)

3Current Electricity

Current, Ohm's law, resistivity

  • \(I = \dfrac{q}{t}\); instantaneous \(I = \dfrac{dq}{dt}\)
  • Ohm's law: \(V = IR\)
  • \(R = \rho\dfrac{l}{A}\); conductivity \(\sigma = 1/\rho\)
  • Current density \(j = I/A\); \(\ \vec{j} = \sigma\vec{E}\)

Drift velocity and mobility

  • \(\vec{v}_d = -\dfrac{e\vec{E}}{m}\,\tau\) (\(\tau\) = relaxation time)
  • \(I = neA\,v_d\)
  • \(\rho = \dfrac{m}{ne^2\tau}\)
  • Mobility: \(\mu = \dfrac{|v_d|}{E} = \dfrac{e\tau}{m}\)

Temperature, energy, power

  • \(\rho_T = \rho_0\left[1 + \alpha(T - T_0)\right]\) (\(\alpha\) = temperature coefficient of resistivity)
  • \(R_2 = R_1\left[1 + \alpha(T_2 - T_1)\right]\)
  • Power: \(P = VI = I^2R = \dfrac{V^2}{R}\)
  • Energy: \(W = VIt\)

Cell: emf and internal resistance

  • Terminal voltage: \(V = \varepsilon - Ir\)
  • Current through external \(R\): \(I = \dfrac{\varepsilon}{R + r}\)
  • Series: \(\varepsilon_{eq} = \varepsilon_1 + \varepsilon_2\), \(\ r_{eq} = r_1 + r_2\)
  • Parallel: \(\varepsilon_{eq} = \dfrac{\varepsilon_1 r_2 + \varepsilon_2 r_1}{r_1 + r_2}\), \(\ r_{eq} = \dfrac{r_1 r_2}{r_1 + r_2}\)

Resistors in combination

  • Series: \(R = R_1 + R_2 + \dots\)
  • Parallel: \(\dfrac{1}{R} = \dfrac{1}{R_1} + \dfrac{1}{R_2} + \dots\)

Kirchhoff's rules and Wheatstone bridge

  • Junction rule: \(\sum I_{\text{in}} = \sum I_{\text{out}}\) (charge conservation)
  • Loop rule: \(\sum \Delta V = 0\) round any closed loop (energy conservation)
  • Balanced bridge (\(I_g = 0\)): $$\frac{R_2}{R_1} = \frac{R_4}{R_3}$$

4Moving Charges and Magnetism

Lorentz force

  • \(\vec{F} = q\left[\vec{E} + \vec{v}\times\vec{B}\right]\)
  • Magnetic part: \(F = qvB\sin\theta\); zero when \(\vec{v} \parallel \vec{B}\)
  • Magnetic force does no work (it is always \(\perp\) to \(\vec{v}\))
  • Current-carrying conductor: \(\vec{F} = I\,\vec{l}\times\vec{B}\)

Charge moving in a uniform \(\vec{B}\)

  • Radius: \(r = \dfrac{mv}{qB}\) (for \(\vec{v} \perp \vec{B}\))
  • Angular frequency \(\omega = \dfrac{qB}{m}\); frequency \(\nu = \dfrac{qB}{2\pi m}\)
  • Period \(T = \dfrac{2\pi m}{qB}\) (independent of speed)
  • Helix pitch: \(p = v_{\parallel}\,T = \dfrac{2\pi m\,v_{\parallel}}{qB}\)

Biot-Savart law

  • $$d\vec{B} = \frac{\mu_0}{4\pi}\,\frac{I\,d\vec{l}\times\vec{r}}{r^3}$$
  • \(|dB| = \dfrac{\mu_0}{4\pi}\dfrac{I\,dl\sin\theta}{r^2}\)
  • Circular loop, on axis: \(B = \dfrac{\mu_0 I R^2}{2(x^2 + R^2)^{3/2}}\)
  • At the centre: \(B = \dfrac{\mu_0 I}{2R}\); for \(N\) turns multiply by \(N\)

Ampere's circuital law

  • $$\oint \vec{B}\cdot d\vec{l} = \mu_0 I_e$$
  • Infinitely long straight wire: \(B = \dfrac{\mu_0 I}{2\pi r}\)
  • Field lines are circles round the wire (right-hand rule).

Solenoid (qualitative only)

  • Inside a long solenoid: \(B = \mu_0 n I\) (\(n\) = turns per unit length)
  • Field inside is uniform; outside it is nearly zero

Parallel currents and the ampere

  • Force per unit length: \(f = \dfrac{\mu_0 I_a I_b}{2\pi d}\)
  • Like currents attract; opposite currents repel
  • 1 A: the current that gives \(2 \times 10^{-7}\,\text{N m}^{-1}\) between two wires 1 m apart

Current loop as a magnetic dipole

  • Magnetic moment: \(\vec{m} = NI\vec{A}\)
  • Torque: \(\vec{\tau} = \vec{m}\times\vec{B}\), \(\ \tau = NIAB\sin\theta\)
  • Field on the axis far away: \(B = \dfrac{\mu_0}{4\pi}\dfrac{2m}{x^3}\)

Moving coil galvanometer

  • Equilibrium: \(NIAB = k\phi\) (\(k\) = torsional constant)
  • Current sensitivity: \(\dfrac{\phi}{I} = \dfrac{NAB}{k}\)
  • Voltage sensitivity: \(\dfrac{\phi}{V} = \dfrac{NAB}{kR}\)
  • Ammeter: small shunt \(r_s\) in parallel, \(\ r_s = \dfrac{I_g R_G}{I - I_g}\)
  • Voltmeter: large \(R\) in series, \(\ R = \dfrac{V}{I_g} - R_G\)

5Magnetism and Matter

Bar magnet (qualitative only)

  • Behaves like a solenoid; dipole moment \(\vec{m}\) points S to N
  • Axial field: \(B = \dfrac{\mu_0}{4\pi}\dfrac{2m}{r^3}\); equatorial: \(B = \dfrac{\mu_0}{4\pi}\dfrac{m}{r^3}\) (opposite to \(\vec{m}\))
  • Torque: \(\vec{\tau} = \vec{m}\times\vec{B}\); energy \(U = -\vec{m}\cdot\vec{B}\)
  • Field lines are closed loops; they never intersect

Magnetisation

  • \(\vec{M} = \dfrac{\vec{m}_{net}}{V}\) (A m\(^{-1}\))
  • \(\vec{B} = \mu_0(\vec{H} + \vec{M})\)
  • \(\vec{M} = \chi\vec{H}\) (\(\chi\) = magnetic susceptibility)
  • \(\vec{B} = \mu_0\mu_r\vec{H} = \mu\vec{H}\), \(\ \mu_r = 1 + \chi\)

Magnetic materials

PropertyDiamagneticParamagneticFerromagnetic
\(\chi\)\(-1 \le \chi < 0\)\(0 < \chi < \varepsilon\) (small)\(\chi \gg 1\)
\(\mu_r\)\(0 \le \mu_r < 1\)\(1 < \mu_r < 1 + \varepsilon\)\(\mu_r \gg 1\)
In a fieldmoves to weaker regionmoves to stronger regionstrongly attracted
ExamplesBi, Cu, Pb, Si, water, NaClAl, Na, Ca, O\(_2\), CuCl\(_2\)Fe, Ni, Co, Gd

Superconductors are perfect diamagnets (\(\chi = -1\), Meissner effect). Above the Curie temperature a ferromagnet becomes paramagnetic.

Gauss's law for magnetism

  • \(\oint \vec{B}\cdot d\vec{S} = 0\): net magnetic flux through any closed surface is zero (no isolated poles)

6Electromagnetic Induction

Flux, Faraday and Lenz

  • \(\Phi_B = \vec{B}\cdot\vec{A} = BA\cos\theta\) (weber, Wb)
  • Faraday's law: $$\varepsilon = -N\,\frac{d\Phi_B}{dt}$$
  • Lenz's law: the induced current opposes the change in flux that produces it (the minus sign)

Motional emf

  • Rod of length \(l\) moving with speed \(v\) \(\perp\) to \(B\): \(\varepsilon = Blv\)
  • The work done to move the rod is dissipated as Joule heat in the circuit (Lenz's law and energy conservation).

Mutual inductance

  • \(N_1\Phi_1 = M_{12}I_2\); \(\ \varepsilon_1 = -M\dfrac{dI_2}{dt}\)
  • Coaxial solenoids: \(M_{12} = M_{21} = \mu_0 n_1 n_2 \pi r_1^2 l\)
  • Unit: henry (H)

Self-inductance

  • \(N\Phi_B = LI\); \(\ \varepsilon = -L\dfrac{dI}{dt}\)
  • Long solenoid: \(L = \mu_0 n^2 A l\); with core: \(L = \mu_r\mu_0 n^2 A l\)
  • Energy stored: \(W = \dfrac{1}{2}LI^2\)

AC generator

  • Flux \(\Phi_B = BA\cos\omega t\); induced emf \(\varepsilon = NBA\omega\sin\omega t = \varepsilon_0\sin\omega t\)
  • Peak emf: \(\varepsilon_0 = NBA\omega\), where \(\omega = 2\pi\nu\)

7Alternating Current

AC basics and rms values

  • \(v = v_m\sin\omega t\), \(\ i = i_m\sin\omega t\)
  • \(I = \dfrac{i_m}{\sqrt{2}} = 0.707\,i_m\), \(\ V = \dfrac{v_m}{\sqrt{2}}\)
  • Average power in \(R\): \(\bar{P} = \dfrac{1}{2}i_m^2R = I^2R\)
  • Mean of \(i\) over a full cycle = 0

Pure \(R\), \(L\), \(C\)

ElementReactancePhase of \(i\)Avg power
\(R\)\(R\)in phase\(I^2R\)
\(L\)\(X_L = \omega L\)lags \(v\) by \(\pi/2\)0
\(C\)\(X_C = \dfrac{1}{\omega C}\)leads \(v\) by \(\pi/2\)0

Series LCR circuit

  • Impedance: $$Z = \sqrt{R^2 + (X_C - X_L)^2}$$
  • \(i_m = \dfrac{v_m}{Z}\); phase \(\tan\phi = \dfrac{X_C - X_L}{R}\)
  • Resonance: \(X_L = X_C\), \(\ \omega_0 = \dfrac{1}{\sqrt{LC}}\), \(Z = R\) (current is maximum)

Power and power factor

  • \(P = VI\cos\phi\); power factor \(\cos\phi = \dfrac{R}{Z}\)
  • Pure \(L\) or \(C\): \(\phi = \pi/2\), \(P = 0\) (wattless current)
  • Resonance or pure \(R\): \(\cos\phi = 1\)

Transformer (ideal)

  • $$\frac{V_s}{V_p} = \frac{N_s}{N_p} = \frac{I_p}{I_s}$$
  • Step-up: \(N_s > N_p\); step-down: \(N_s < N_p\). Losses: flux leakage, winding resistance, eddy currents, hysteresis.

8Electromagnetic Waves

Displacement current

  • \(i_d = \varepsilon_0\dfrac{d\Phi_E}{dt}\)
  • Ampere-Maxwell law: \(\oint \vec{B}\cdot d\vec{l} = \mu_0 i_c + \mu_0\varepsilon_0\dfrac{d\Phi_E}{dt}\)

EM wave properties

  • \(E_x = E_0\sin(kz - \omega t)\), \(\ B_y = B_0\sin(kz - \omega t)\)
  • \(k = 2\pi/\lambda\), \(\ \omega = 2\pi\nu\), \(\ c = \nu\lambda\)
  • \(c = \dfrac{1}{\sqrt{\mu_0\varepsilon_0}}\); in a medium \(v = \dfrac{1}{\sqrt{\mu\varepsilon}}\)
  • \(\dfrac{E_0}{B_0} = c\); \(\vec{E}\), \(\vec{B}\) and the direction of travel are mutually \(\perp\) (transverse)

Electromagnetic spectrum

TypeWavelength rangeProduction / use
Radio> 0.1 mOscillating charges in antennas; radio, TV, cellphones
Microwave0.1 m to 1 mmKlystron, magnetron; radar, microwave ovens
Infrared1 mm to 700 nmHot bodies; remote controls, physical therapy, greenhouse effect
Visible700 nm to 400 nmElectron transitions in atoms; vision
Ultraviolet400 nm to 1 nmSun, special lamps; LASIK, water purification
X-rays1 nm to \(10^{-3}\) nmX-ray tubes; medical diagnosis
Gamma rays< \(10^{-3}\) nmRadioactive decay of nuclei; cancer treatment

9Ray Optics and Optical Instruments

Spherical mirrors

  • Focal length \(f = R/2\)
  • Mirror equation: $$\frac{1}{v} + \frac{1}{u} = \frac{1}{f}$$
  • Magnification \(m = \dfrac{h'}{h} = -\dfrac{v}{u}\)
  • Cartesian sign convention: distances measured from the pole; along incident light positive.

Refraction and TIR

  • Snell's law: \(n_1\sin i = n_2\sin r\); \(\ n_{21} = \dfrac{n_2}{n_1} = \dfrac{v_1}{v_2}\)
  • Apparent depth: \(\dfrac{\text{real depth}}{\text{apparent depth}} = n\)
  • Critical angle (denser to rarer): \(\sin i_c = \dfrac{1}{n_{21}}\), with \(n_{21}\) of the denser w.r.t. rarer medium
  • TIR needs: light going denser to rarer, and \(i > i_c\)

Spherical surface and lenses

  • Single surface: \(\dfrac{n_2}{v} - \dfrac{n_1}{u} = \dfrac{n_2 - n_1}{R}\)
  • Lens maker's formula: $$\frac{1}{f} = (n_{21} - 1)\left(\frac{1}{R_1} - \frac{1}{R_2}\right)$$
  • Thin lens: \(\dfrac{1}{v} - \dfrac{1}{u} = \dfrac{1}{f}\); \(\ m = \dfrac{h'}{h} = \dfrac{v}{u}\)

Power and lens combinations

  • \(P = \dfrac{1}{f}\) (\(f\) in metres), unit dioptre (D)
  • Lenses in contact: \(\dfrac{1}{f} = \dfrac{1}{f_1} + \dfrac{1}{f_2} + \dots\), \(\ P = P_1 + P_2 + \dots\)
  • Total magnification: \(m = m_1 m_2 m_3 \dots\)

Prism

  • \(r_1 + r_2 = A\); \(\ A + \delta = i + e\)
  • Minimum deviation (\(i = e\), \(r_1 = r_2 = A/2\)): $$n_{21} = \frac{\sin\left[(A + D_m)/2\right]}{\sin(A/2)}$$
  • Thin prism: \(D_m = (n_{21} - 1)A\)

Optical instruments (\(D = 25\) cm)

  • Simple microscope: \(m = 1 + \dfrac{D}{f}\) (image at \(D\)); \(\ m = \dfrac{D}{f}\) (image at infinity)
  • Compound microscope (final image at infinity): \(m = m_o m_e = \dfrac{L}{f_o}\cdot\dfrac{D}{f_e}\), \(L\) = tube length
  • Telescope (normal adjustment): \(m = \dfrac{f_o}{f_e}\); tube length \(f_o + f_e\)
  • Reflecting telescopes (Cassegrain) avoid chromatic aberration and need no huge lens.

10Wave Optics

Huygens principle and refraction

  • \(n_{21} = \dfrac{v_1}{v_2} = \dfrac{\sin i}{\sin r}\)
  • In a medium of index \(n\): \(\lambda' = \lambda/n\), speed \(c/n\); frequency unchanged
  • Reflection: angle of incidence = angle of reflection

Interference

  • Constructive: path difference \(= n\lambda\); destructive: \(= (n + \tfrac{1}{2})\lambda\)
  • Resultant intensity: \(I = 4I_0\cos^2\dfrac{\phi}{2}\)
  • Sustained interference needs coherent sources (constant phase difference)

Young's double slit (final expressions only)

  • Bright fringes: \(x_n = \dfrac{n\lambda D}{d}\); dark fringes: \(x_n = \left(n + \dfrac{1}{2}\right)\dfrac{\lambda D}{d}\)
  • Fringe width: $$\beta = \frac{\lambda D}{d}$$
  • \(d\) = slit separation, \(D\) = slit-to-screen distance. Fringes are equally spaced.

Single-slit diffraction (qualitative only)

  • Minima: \(\theta \approx \dfrac{n\lambda}{a}\), \(n = \pm 1, \pm 2, \dots\)
  • Central maximum: angular width \(\dfrac{2\lambda}{a}\); it is twice as wide as other maxima

Polarisation

  • Malus' law: \(I = I_0\cos^2\theta\)
  • Unpolarised light through a polaroid: intensity halves

11Dual Nature of Radiation and Matter

Photon

  • Energy \(E = h\nu = \dfrac{hc}{\lambda}\)
  • Momentum \(p = \dfrac{h\nu}{c} = \dfrac{h}{\lambda}\)
  • \(1\,\text{eV} = 1.6 \times 10^{-19}\,\text{J}\)

Einstein's photoelectric equation

  • $$K_{max} = h\nu - \phi_0 = eV_0$$
  • Work function \(\phi_0 = h\nu_0\); threshold wavelength \(\lambda_0 = c/\nu_0\)
  • \(V_0 = \dfrac{h}{e}\nu - \dfrac{\phi_0}{e}\): straight-line graph of \(V_0\) vs \(\nu\), slope \(h/e\)

Photoelectric observations

  • Photocurrent \(\propto\) intensity (for \(\nu > \nu_0\))
  • Stopping potential depends on \(\nu\), not on intensity
  • No emission below \(\nu_0\), however intense the light; emission is instantaneous

de Broglie relation

  • $$\lambda = \frac{h}{p} = \frac{h}{mv} = \frac{h}{\sqrt{2mK}}$$
  • Electron accelerated through \(V\): \(\lambda = \dfrac{h}{\sqrt{2meV}} = \dfrac{1.227}{\sqrt{V}}\,\text{nm}\)

12Atoms

Rutherford scattering

  • Distance of closest approach (\(K\) = kinetic energy of the alpha particle): $$d = \frac{1}{4\pi\varepsilon_0}\,\frac{2Ze^2}{K}$$
  • Most alpha particles pass undeflected: the atom is mostly empty, with a tiny massive nucleus

Bohr's postulates

  • Stationary orbits: \(L = mvr = \dfrac{nh}{2\pi}\)
  • Transition: \(h\nu = E_i - E_f\)

Bohr model of hydrogen

  • Radius: \(r_n = \dfrac{n^2 h^2 \varepsilon_0}{\pi m e^2} = n^2 a_0\), Bohr radius \(a_0 = 5.29 \times 10^{-11}\,\text{m}\)
  • Speed: \(v_n = \dfrac{e^2}{2\varepsilon_0 n h} = \dfrac{1}{n}\,\dfrac{e^2}{4\pi\varepsilon_0\,(h/2\pi)}\)
  • Energy: $$E_n = -\frac{me^4}{8n^2\varepsilon_0^2h^2} = -\frac{13.6}{n^2}\,\text{eV}$$
  • KE \(= -E_n\), PE \(= 2E_n\); ionisation energy of H = 13.6 eV

Line spectra (qualitative only)

  • Photon emitted when the electron drops from \(n_i\) to \(n_f\): \(h\nu_{if} = E_{n_i} - E_{n_f}\)
  • Each allowed transition gives one line, so hydrogen emits a discrete line spectrum

13Nuclei

Composition and size

  • \(A = Z + N\); \(\ 1\,\text{u} = 1.660539 \times 10^{-27}\,\text{kg}\)
  • Radius: \(R = R_0A^{1/3}\), \(R_0 = 1.2 \times 10^{-15}\,\text{m}\)
  • Nuclear density is the same for all nuclei (about \(2.3 \times 10^{17}\,\text{kg m}^{-3}\))

Mass-energy and binding energy

  • \(E = mc^2\); \(\ 1\,\text{u} \equiv 931.5\,\text{MeV}\)
  • Mass defect: \(\Delta M = \left[Zm_p + (A - Z)m_n\right] - M\)
  • Binding energy \(E_b = \Delta M\,c^2\); per nucleon \(E_{bn} = E_b/A\)
  • \(E_{bn}\) peaks at about 8.75 MeV near \(A = 56\); roughly constant (about 8 MeV) for \(30 < A < 170\)

Nuclear force

  • Much stronger than Coulomb force; short range (a few fm)
  • Nearly independent of charge (n-n, p-p and n-p similar)

Fission and fusion

  • \({}^{1}_{0}\text{n} + {}^{235}_{92}\text{U} \to {}^{236}_{92}\text{U} \to {}^{144}_{56}\text{Ba} + {}^{89}_{36}\text{Kr} + 3\,{}^{1}_{0}\text{n}\) (about 200 MeV)
  • \({}^{1}_{1}\text{H} + {}^{1}_{1}\text{H} \to {}^{2}_{1}\text{H} + e^+ + \nu + 0.42\,\text{MeV}\)
  • \({}^{2}_{1}\text{H} + {}^{2}_{1}\text{H} \to {}^{3}_{2}\text{He} + \text{n} + 3.27\,\text{MeV}\)

14Semiconductor Electronics

Energy bands (qualitative)

  • Conductor: bands overlap, or the conduction band is partly filled
  • Insulator: \(E_g > 3\) eV
  • Semiconductor: \(E_g < 3\) eV (Si about 1.1 eV, Ge about 0.7 eV)

Carrier concentration

  • Intrinsic: \(n_e = n_h = n_i\)
  • In equilibrium: $$n_e\,n_h = n_i^2$$
  • n-type (pentavalent dopant, e.g. As, P): \(n_e \gg n_h\)
  • p-type (trivalent dopant, e.g. B, Al, In): \(n_h \gg n_e\)

p-n junction diode

  • Diffusion and drift form a depletion layer and barrier potential
  • Forward bias: barrier lowered, current rises sharply past the threshold (about 0.7 V for Si, 0.2 V for Ge)
  • Reverse bias: barrier raised, very small current until breakdown

Diode as a rectifier

  • Half-wave: one diode, output frequency = input frequency \(\nu\)
  • Full-wave (centre-tap, two diodes): output frequency = \(2\nu\)
  • A capacitor filter smooths the pulsating dc
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